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| BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with the BD743 Series 90 W at 25C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD744 Collector-base voltage (IE = 0) BD744A BD744B BD744C BD744 Collector-emitter voltage (IB = 0) BD744A BD744B BD744C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot 1/2LIC 2 TA Tj Tstg TL VCEO VCBO SYMBOL VALUE -50 -70 -90 -110 -45 -60 -80 -100 -5 -15 -20 -5 90 2 90 -65 to +150 -65 to +150 -65 to +150 260 V A A A W W mJ C C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD744 V (BR)CEO IC = -30 mA IB = 0 (see Note 5) BD744A BD744B BD744C VCE = -50 V V CE = -70 V V CE = -90 V ICBO Collector cut-off current V CE = -110 V V CE = -50 V V CE = -70 V V CE = -90 V V CE = -110 V ICEO IEBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -30 V V CE = -60 V VEB = VCE = V CE = V CE = IB = IB = VCE = V CE = -5 V -4 V -4 V -4 V -0.5 A -5 A -4 V -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = -1 A IC = -5 A IC = -15 A IC = -5 A IC = -15 A IC = -5 A IC = -15 A IC = -1 A IC = -1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 5 (see Notes 5 and 6) 40 20 5 -1 -3 -1 -3 V V 150 TC = 125C TC = 125C TC = 125C TC = 125C BD744 BD744A BD744B BD744C BD744 BD744A BD744B BD744C BD744/744A BD744B/744C MIN -45 -60 -80 -100 -0.1 -0.1 -0.1 -0.1 -5 -5 -5 -5 -0.1 -0.1 -0.5 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = -10 V VCE = -10 V |hfe| NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.4 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER td tr ts tf TEST CONDITIONS IC = -5 A V BE(off) = 4.2 V IB(on) = -0.5 A RL = 6 MIN IB(off) = 0.5 A tp = 20 s, dc 2% TYP 20 120 600 300 MAX UNIT ns ns ns ns Delay time Rise time Storage time Fall time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V tp = 300 s, duty cycle < 2% TCS638AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 IC = 10 IB t p = 300s, duty cycle < 2% TCS638AB TC = 125C TC = 25C TC = -55C hFE - DC Current Gain -1*0 100 -0*1 TC = -55C TC = 25C TC = 125C -0*01 -0*1 -1*0 -10 -100 10 -0*1 -1*0 -10 -100 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS638AA IC - Collector Current - A -10 tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation -1*0 -0*1 BD744 BD744A BD744B BD744C -0*01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 3. PRODUCT INFORMATION 3 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS637AA Figure 4. PRODUCT INFORMATION 4 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 5 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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